IXTA152N085T7
60
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
60
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
55
R G = 5 ?
55
50
45
40
35
30
25
20
15
10
I D = 25A
I D = 50A
V GS = 10V
V DS = 43V
50
45
40
35
30
25
20
15
10
R G = 5 ?
V GS = 10V
V DS = 43V
T J = 25oC
T J = 125oC
25
35
45
55
65
75
85
95
105
115
125
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
110
43
47
76
100
90
80
70
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 43V
I D = 25A
41
39
37
35
46
45
44
t f t d(off) - - - -
R G = 5 ? , V GS = 10V
V DS = 43V
72
68
64
60
33
I D = 50A
50
31
43
I D = 25A
60
40
30
20
10
I D = 50A
29
27
25
23
42
41
40
56
52
48
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
46
45
80
75
130
120
220
200
44
T J = 25oC
70
110
100
I D = 25A
180
160
43
42
41
40
t f t d(off) - - - -
R G = 5 ? , V GS = 10V
V DS = 43V
T J = 125oC
T J = 125oC
T J = 25oC
65
60
55
50
90
80
70
60
50
40
I D = 50A
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 43V
140
120
100
80
60
40
39
45
30
20
24
28
32
36
40
44
48
4
6
8
10
12
14
16
18
20
I D - Amperes
? 2006 IXYS CORPORATION All rights reserved
R G - Ohms
IXYS REF: T_152N085T (4V) 6-12-06.xls
相关PDF资料
IXTA152N085T MOSFET N-CH 85V 152A TO-263
IXTA160N04T2 MOSFET N-CH 40V 160A D2PAK
IXTA160N075T7 MOSFET N-CH 75V 160A TO-263-7
IXTA160N075T MOSFET N-CH 75V 160A TO-263
IXTA160N10T7 MOSFET N-CH 100V 160A TO-263-7
IXTA160N10T MOSFET N-CH 100V 160A TO-263
IXTA180N085T7 MOSFET N-CH 85V 180A TO-263-7
IXTA180N085T MOSFET N-CH 85V 180A TO-263
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